ATU - Analytik für Technik und Umwelt

Surface analysis – not only for semiconductor industry

Surface analysis – not only for  semiconductor industry Electronen spectroscopy for chemical analysis (ESCA)
Synonym X-ray photoelectron spectroscopy (XPS):

Qualitative and quantitative analysis of elements and compounds on surfaces and interfaces. Analysis of chemical binding states. Typical depth of information 4- 8 nm. Depth profiling in nm steps by means of argon ion sputtering. Measurement spot size 15 – 700 µm. Photoelectron imaging down to 3 µm resolution. Detection limits for elements typically 0.1 – 1 atom-%.
Fieldemission scanning electron microscopy with energy dispersive X-ray analysis (FE-SEM/EDX):
Topographic analysis of surfaces. Magnification up to 100,000 x. By means of EDX local qualitative and quantitative elemental analysis of surface area, including C. Elemental EDX-imaging (spot, line, area) Depth of information 0.2 – 5 µm.
FTIR microscopy
Microscopic infrared analysis in reflection and transmission mode. Identification of organic layers and contaminations, minimum dimensions 10 nm thickness or 10 µm diameter.
Atomic force microscopy with micro area thermal analysis (AFM/µ-TA)
Characterization of surfaces in the nm range with determination of micro roughness and thermomechanical / -dynamic properties.
Vapour Phase Decomposition (VPD-AAS/VPD-ICP-MS):
Analysis of wafer contaminations by etching with HF followed by AAS and ICP-MS measurement. Detection limits for metallic contaminations in the passivation layer approximately 1E+8 to 1E+9 atoms/cm².
Ionic cleanliness:
Sensitive detection of water soluble anionic and cationic surface contamination. Detection limit e.g. for chloride 0.1 ng/cm².
Selective surface etching followed by element screening with spectroscopic methods with detection limits down to ppt level.
Electrochemical impedance spectroscopy and elektrohydrodynamic spectroscopy (IS/EID/EHD):
In-situ characterization of chemical, galvanic, dielectric systems, semiconductors and sensors, of corrosion-, diffusion- and adsorption-systems. Investigation of metallization-, etch- and cleaning-liquids, of materials and circuits (< 10E15 Ohm * cm).
Investigation of contaminations on surfaces by fast heating of sample under vacuum or in inert gases with mass spectroscopic detection of evaporated compounds.